Samsung-rolls-out-advanced-memory-chips
250-gigabyte (GB) SATA solid state drive/Courtesy of Samsung

Korean tech giant takes 3D memory to new heights

Despite Japan’s export curbs on high-tech materials used to make semiconductors in Korea, Samsung Electronics continues to come up with innovative products.

The Seoul-based company announced this week that it began rolling out 250-gigabyte SATA solid-state drive that integrates the company’s sixth-generation 256-gigabit three-bit V-NAND for global PC OEMs.

By launching a new generation of V-NAND in just 13 months, the world’s largest semiconductor maker said that it reduced the mass production cycle by four months.

By bringing cutting-edge 3D memory technology to volume production, we are able to introduce timely memory lineups that significantly raise the bar for speed and power efficiency,” Samsung Executive Vice President Kyung Kye-hyun said.

With faster development cycles for next-generation V-NAND products, we plan to rapidly expand the markets for our high-speed, high-capacity 512-gigabit V-NAND-based solutions.”

The company said that the product is second to none.

Our sixth-generation V-NAND features the industry’s fastest data transfer rate, capitalizing on our distinct manufacturing edge that is taking 3D memory to new heights,” a Samsung official said.

Utilizing our unique ‘channel hole etching’ technology, the new V-NAND adds around 40-percent more cells to the previous 9x-layer single-stack structure.”

He added that the exploit was achieved by building an electrically conductive mold stack comprised of 136 layers, then vertically piercing cylindrical holes from top to bottom, creating uniform 3D charge trap flash cells.

On July 4, Tokyo imposed curbs on exports of materials used to make semiconductors and flat-panel displays to Seoul.

 

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