Shown above is a 1-terabit triple-level cell eighth-generation Vertical NAND. Samsung Electronics has launched mass production of the advanced product for the first time in the industry. Photo courtesy of Samsung Electronics

Industry’s highest storage capacity and bit density will come

Samsung Electronics announced on Nov. 7 that it had launched mass production of a 1-terabit (Tb) triple-level cell (TLC) eighth-generation Vertical NAND (V-NAND) with the industry’s highest bit density.

The Seoul-based tech giant promised mass production during the Flash Memory Summit 2022 and Samsung Memory Tech Day 2022.

Samsung said that the new V-NAND also featured the highest storage capacity to date, enabling larger storage space in next-generation enterprise server systems worldwide.

“As market demand for denser, greater-capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down,” Samsung Executive Vice President Hur Sung-hoi said.

“Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations.”

Plus, Samsung noted that it had attained the industry’s highest bit density by significantly enhancing the bit productivity per wafer.

The eighth-generation V-NAND is expected to serve as the cornerstone for storage configurations that help expand the storage capacity in next-generation enterprise servers while extending its use into the automotive market where reliability is especially critical, according to Samsung.

Samsung is the world’s largest manufacturer of memory chips and smartphones.